Search Results - zichen+miao

5 Results

Sort By:

Forced Unbalanced Method to Reduce Transient Current Unbalance in Semiconductor Power Switches

Switching power devices, specifically SiC MOSFET, has wider parameter variations (Vth, Rds(on)) due to fabrication process; therefore, when putting several MOSFET dies togther in parallel in a power module, there will be current/power unbalance when they are being used. Several publications have mentioned about using different control techniques to...

Published: 2/6/2017 | Inventor(s): Zichen Miao, Yincan Mao, Khai Ngo, Chi Ming Wang

Keywords(s):

Category(s): Electrical, Energy, Engineering, Transportation

Parasitic Inductances Coupling to Reduce Transient Current Unbalance in Semiconductor Power Switches

Switching power devices, specifically SiC MOSFET, has wider parameter variations (Vth, Rds(on)) due to fabrication process: therefore, when putting several MOSFET dies together in parallel in a power module, there will be current/power unbalance when they are being used. Several publications have mentioned about using different control techniques to...

Published: 1/13/2017 | Inventor(s): Yincan Mao, Zichen Miao, Khai Ngo, Chi Ming Wang

Keywords(s):

Category(s): Electrical, Energy, Engineering, Transportation

Use Parasitic Inductance Coupling to Eliminate Power Device Switching Operation Reliability Issues Such As Cross-Talk, Self Turn-On, and Self-Sustained Oscillation

The purpose of this invention is to show the new concept of using parasitic inductance coupling to improve SiC MOSFET switching operation reliability to prevent detrimental phenomenon such as crosstalk, self turn-on, and self-sustained oscillation from happening. Conventional methods either slow down the circuit or increase the design complexity. In...

Published: 1/13/2017 | Inventor(s): Yincan Mao, Zichen Miao, Khai Ngo, Chi Ming Wang

Keywords(s):

Category(s): Electrical, Energy, Engineering, Transportation

Distributed Kelvin-Source Resistance to Reduce Dynamic Power/Current Imbalance in Paralleled Semiconductor Power Switches

Switching power devices, especially SiC MOSFETs, have wide parameter variations due to fabrication process. When putting several MOSFETs in parallel, there will be current/power unbalance during switching transient. Several publications have mentioned about using different control techniques to actively reduce the unbalance. However, these controls...

Published: 1/13/2017 | Inventor(s): Yincan Mao, Zichen Miao, Khai Ngo, Chi Ming Wang

Keywords(s):

Category(s): Electrical, Energy, Engineering, Transportation

Drivers with Equalizers for Paralleled Switches

Semiconductor switches are often paralleled to realize a power module with high current rating. They are driven preferably by a single driver that applies the same voltage/current to all switches' input terminals. Some of the switches will take more currents owing to mismatches among such parameters as on-resistances and threshold voltages, and suffer...

Published: 2/29/2016 | Inventor(s): Khai Ngo, Lujie Zhang, Zichen Miao

Keywords(s):

Category(s): Electrical, Energy, Engineering